Switching Dynamics of Bi<SUB>2</SUB>Sr<SUB>2</SUB>CaCu<SUB>2</SUB>O<SUB>8+δ</SUB> Intrinsic Josephson Junctions: Macroscopic Quantum Tunneling and Self-Heating Effect

DOI DOI Web Site 23 Citations 51 References Open Access
  • Kashiwaya Hiromi
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Matsumoto Tetsuro
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Shibata Hajime
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kashiwaya Satoshi
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Eisaki Hiroshi
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Yoshida Yoshiyuki
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kawabata Shiro
    Nanotechnology Research Institute, AIST CREST, Japan Science and Technology Agency (JST)
  • Tanaka Yukio
    Department of Applied Physics, Nagoya University

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The switching dynamics of current-biased Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions (IJJs) was studied to clarify the effects of d-wave superconductivity and the stack structure on switching properties. High-quality IJJs were fabricated, and then the temperature dependence of the switching probability distribution was measured for the first and second switchings. Although the standard deviation of the distribution detected for both switchings showed similar saturation characteristics with decreasing temperature, the temperature at saturation was about thirteenfold higher for the second switching than for the first switching. The properties of the first switching can be explained in terms of a conventional underdamped JJ, that is, macroscopic quantum tunneling below the crossover temperature, and thermal activation with a quality factor of 70±20 above the crossover temperature. In contrast, the relatively higher effective temperature for the second switching evaluated from the switching probability distribution suggests a predominant thermal activation process under the influence of the self-heating effect even at sufficiently low temperatures.

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