Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

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  • Tsukimoto Susumu
    World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
  • Ito Kazuhiro
    Department of Materials Science and Engineering, Kyoto University
  • Wang Zhongchang
    World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
  • Saito Mitsuhiro
    World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
  • Ikuhara Yuichi
    World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University Institute of Engineering Innovation, The University of Tokyo
  • Murakami Masanori
    The Ritsumeikan Trust

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  • Growth and microstructure of epitaxial Ti3SiC2 contact layers on SiC

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Abstract

Growth and microstructure of ternary Ti3SiC2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti3SiC2 layer was fabricated by deposition of Ti/Al contacts (where a slash “/” indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000°C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti3SiC2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti3SiC2 layer and determination of the Ti3SiC2/4H-SiC interface structure. The Ti3SiC2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of (0001)TSC||(0001)S and [0\\bar110]TSC||[0\\bar110]S where TSC and S represent Ti3SiC2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti3SiC2 and 4H-SiC.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 50 (5), 1071-1075, 2009

    The Japan Institute of Metals and Materials

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