Numerical Analysis for Electromigration of Cu Atom
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- Nemoto Takenao
- Tohoku Univ. Graduated School of Engineering
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- Murakawa Tutomu
- Tohoku Univ. Graduated School of Engineering
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- Yokobori, Jr. A. Toshimitsu
- Tohoku Univ. Graduated School of Engineering
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抄録
The electromigration of Cu interconnection was investigated to solve the Huntigton’s equation by numerical analysis. The Cu atoms moved toward anode from cathode and accumulated at the anode end. This result was in good agreement with the result previously derived by our theoretical analysis. The accumulation rate of Cu atoms increased with increasing in current density, but it was not so influenced by temperature.<BR>The characteristic of the rate of electromigration showed a liner relationship with current density and exponential relationship with temperature. This result agreed with the equation experimentally derived by Black. This result proved that numerical analysis of atom transport equation enables to predict of electromigration failure time.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 48 (9), 2513-2517, 2007
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204249577216
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- NII論文ID
- 10019854027
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- HANDLE
- 10097/51930
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- NDL書誌ID
- 8885651
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
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- CiNii Articles
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- 使用不可