Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy
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- Takazawa Tsukasa
- Department of Materials Engineering, The University of Tokyo
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- Ikeda Minoru
- Department of Materials Engineering, The University of Tokyo
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- Suzuki Toshio
- Department of Materials Engineering, The University of Tokyo
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Two-dimensional faceted crystal growth of silicon from undercooled melt of Si-20 mass%Ni alloy was experimentally investigated, in which a droplet sample from 10 to 100 mg was undercooled on a single-crystal sapphire and growing crystals were observed in situ. Observed crystals were classified according to the shapes of square, wedge and irregular shapes. The growth velocity was measured for different undercooling conditions. The growth velocity of square shaped crystals was about half times smaller than that of wedge shaped crystals. The growth of square shaped crystals is regarded to be two-dimensional and it is compared with the results of two-dimensional phase-field simulations. Growth velocity in both is in good agreement and the linear kinetic coefficient is estimated to be 0.002 m/sK.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 48 (9), 2285-2288, 2007
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204249624576
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- NII論文ID
- 10019853113
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 8884600
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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