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- Tahashi Masahiro
- Department of Electrical Engineering, Chubu University
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- Iinuma Kenji
- Department of Electrical Engineering, Chubu University
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- Goto Hideo
- Department of Electrical Engineering, Chubu University
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- Yoshino Kenji
- Department of Electrical and Electronic Engineering, University of Miyazaki
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- Takahashi Makoto
- Department of Applied Chemistry, Chubu University
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- Ido Toshiyuki
- Department of Electrical Engineering, Chubu University
書誌事項
- タイトル別名
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- Growth of Cu(In,Ga)Se<sub>2</sub> Films Selenized Using Dimethylselenium
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抄録
Cu(In,Ga)Se2 (CIGS) films were prepared by thermal treatment of In/CuGa metallic precursors using dimethylselenium, which is a less hazardous Se source than H2Se gas. CIGS films were fabricated using various heating times and dimethylselenium supply rates. We investigated the effect of the selenization temperature and the dimethylselenium supply rate on the crystal phase and surface morphology of the films. It was demonstrated that deimethylseleniumt is effective in preparation of the CIGS films as the alternative material of H2Se.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 53 (6), 1169-1171, 2012
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204249994624
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- NII論文ID
- 10030630399
- 130004824875
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 023682566
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可