Room-Temperature Operation of Injection-Type 1.5 μm Light-Emitting Diodes with Er,O-Codoped GaAs

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  • Fujiwara Yasufumi
    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University

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  • Room-Temperature Operation of Injection-Type 1.5 μm Light-Emitting Diodes with Er,O-Codoped GaAs
  • Room Temperature Operation of Injection Type 1 5マイクロm Light Emitting Diodes with Er O Codoped GaAs

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Injection-type 1.5 μm light-emitting diodes (LEDs) with Er,O-codoped GaAs (GaAs:Er,O) have been fabricated by organometallic vapor phase epitaxy (OMVPE). Electroluminescence (EL) spectrum from the LEDs under forward bias at room temperature was dominated by the luminescence due to an Er-2O center, an Er atom located at the Ga sublattice with two adjacent O atoms, indicating that injected carriers contribute effectively to the excitation of the Er-2O center. The current density dependence of EL properties revealed an extremely large excitation cross section (approximately 10−15 cm2) of Er ions by current injection. GaInP/GaAs:Er,O/GaInP double-heterostructure (DH) LEDs have also been fabricated. The saturated EL intensity significantly increased with increasing GaAs:Er,O active-layer thickness.

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