Room-Temperature Operation of Injection-Type 1.5 μm Light-Emitting Diodes with Er,O-Codoped GaAs
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- Fujiwara Yasufumi
- Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
書誌事項
- タイトル別名
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- Room-Temperature Operation of Injection-Type 1.5 μm Light-Emitting Diodes with Er,O-Codoped GaAs
- Room Temperature Operation of Injection Type 1 5マイクロm Light Emitting Diodes with Er O Codoped GaAs
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説明
Injection-type 1.5 μm light-emitting diodes (LEDs) with Er,O-codoped GaAs (GaAs:Er,O) have been fabricated by organometallic vapor phase epitaxy (OMVPE). Electroluminescence (EL) spectrum from the LEDs under forward bias at room temperature was dominated by the luminescence due to an Er-2O center, an Er atom located at the Ga sublattice with two adjacent O atoms, indicating that injected carriers contribute effectively to the excitation of the Er-2O center. The current density dependence of EL properties revealed an extremely large excitation cross section (approximately 10−15 cm2) of Er ions by current injection. GaInP/GaAs:Er,O/GaInP double-heterostructure (DH) LEDs have also been fabricated. The saturated EL intensity significantly increased with increasing GaAs:Er,O active-layer thickness.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 46 (9), 1969-1974, 2005
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204250457856
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- NII論文ID
- 130004452877
- 40006876246
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 7438887
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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