Microelectronic Wire Bonding with Insulated Au Wire: Effects of Process Parameters on Insulation Removal and Crescent Bonding

DOI Web Site Web Site 参考文献18件
  • Lee Jaesik
    Microjoining Lab, Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo
  • Mayer Michael
    Microjoining Lab, Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo
  • Zhou Norman
    Microjoining Lab, Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo
  • Persic John
    Microbonds Inc.

この論文をさがす

抄録

The characteristics of the crescent bond process with insulated Au wire are investigated. Au wire with a sub-micron thick insulation coating is bonded on standard Ag plated leadframe diepads at 493 K. The wire loops are oriented perpendicular to the ultrasonic horn. The pull force obtained with a basic bonding process of insulated Au wire and bare Au wire are optimized by iteration and compared. Subsequently, the process is modified for the application with insulated wire. To increase the pull force an insulation layer removing stage (cleaning stage) is inserted before the bonding stage. The cleaning stage consists of a scratching motion (shift) toward to the ball bond in combination with ultrasound. The pull force obtained in this way with the insulated wire is 90.1±7.9 mN which is 2.4±2.0 mN larger than that obtained with bare Au wire.

収録刊行物

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 49 (10), 2347-2353, 2008

    公益社団法人 日本金属学会

参考文献 (18)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ