Mapping the Local Density of States by Very-Low-Energy Scanning Electron Microscope
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- Pokorná Zuzana
- Department of Electron Optics, Institute of Scientific Instruments of the ASCR v.v.i.
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- Frank Lud\\v{e}k
- Department of Electron Optics, Institute of Scientific Instruments of the ASCR v.v.i.
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説明
Reflection of very slow electrons from solid surfaces has been reported to be inversely proportional to the local density of electronic states coupled to the incident electron wave. The reflected electron flux at units of eV used as the image signal in a scanning electron microscope allows mapping of the local density of states at high spatial resolution. Good performance of the microscope at very low energies is enabled by introducing the beam-retarding immersion lens (the cathode lens) with a biased specimen serving as the cathode. Results of demonstration experiments on aluminum are provided.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 51 (2), 214-218, 2010
公益社団法人 日本金属学会
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- CRID
- 1390001204251409024
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- NII論文ID
- 10026265051
- 130004454404
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 10532984
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- 本文言語コード
- en
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