Effect of Vanadium Doping on Structure and Properties of ZnSe Films Prepared by Metal-Organic Vapor Phase Epitaxy
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- Tahashi Masahiro
- Department of Electrical Engineering, Chubu University
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- Wu Zunyi
- Department of Electrical Engineering, Chubu University
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- Goto Hideo
- Department of Electrical Engineering, Chubu University
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- Hayashi Youji
- Department of Electrical Engineering, Chubu University
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- Ido Toshiyuki
- Department of Electrical Engineering, Chubu University
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Vanadium-doped ZnSe films were epitaxially grown on (100) GaAs substrates by metal-organic vapor phase epitaxy. The crystal structure and the state of vanadium in the ZnSe crystal were investigated using X-ray diffractometry, infrared absorption, and photocurrent. It was revealed that zinc sites in the ZnSe crystal were substituted by vanadium atoms on the basis of the results of infrared absorption which peaked around 2200 nm as a result of the presence of V2+, and the photocurrent which peaked at 860 nm as a result of the internal transition between V2+ and V3+. The magnetic properties were measured by using a superconducting quantum interface device at room temperature, and it was found that the magnetization curve of ZnSe was markedly changed by vanadium doping.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 50 (4), 719-722, 2009
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204251780352
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- NII論文ID
- 10024813266
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 10201289
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可
