Influence of TiO2 buffer on structure and optical properties of ZnO film on Si(100) substrate

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  • Zhang Weiying
    College of Physics and Electronic Information, Luoyang Normal College Department of Physics, University of Science and Technology of China
  • Zhao Jianguo
    College of Physics and Electronic Information, Luoyang Normal College
  • Liu Zhenzhong
    College of Physics and Electronic Information, Luoyang Normal College
  • Liu Zhaojun
    College of Physics and Electronic Information, Luoyang Normal College
  • Fu Zhuxi
    Department of Physics, University of Science and Technology of China

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タイトル別名
  • Influence of TiO<SUB>2</SUB> Buffer on Structure and Optical Properties of ZnO Film on Si(100) Substrate

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ZnO films were prepared on p-Si (100) substrates by direct current (DC) sputtering with and without TiO2 buffer. The crystal structures, surface morphologies and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL). XRD results indicated that the growth mode of ZnO film was changed from strong (002) preferential orientation to several crystal orientations by introducing TiO2 buffer, and the residual strain was reduced. SEM manifested that ZnO film with TiO2 buffer had the uniform grain size and flat surface. In addition, stronger ultraviolet emission was observed from ZnO film with TiO2 than that without at room temperature. The low temperature photoluminescence was investigated to understand the different PL mechanism of ZnO films.

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