Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb
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- Nitta Noriko
- Department of Mechanical Engineering, Kobe University
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- Hasegawa Tokiya
- Department of Mechanical Engineering, Kobe University
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- Yasuda Hidehiro
- Department of Mechanical Engineering, Kobe University
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- Hayashi Yoshihiko
- Research Reactor Institute, Kyoto University
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- Yoshiie Toshimasa
- Research Reactor Institute, Kyoto University
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- Taniwaki Masafumi
- School of Environmental Science and Technology, Kochi University of Technology
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- Mori Hirotaro
- Research Center for Ultra-High Voltage Electron Microscopy, Osaka University
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Void formation and structure change by heavy ion irradiation were investigated in GaSb and InSb thin films. The voids were formed after irradiation in both materials. The average diameter of the voids was about 15 nm in GaSb and 20 nm in InSb irradiated with 60 keV Sn+ ions to a fluence of 0.25×1018 ions/m2 at room temperature. The void size in InSb is larger than that in GaSb. The large void size is quantitatively explained by the amount of induced vacancies obtained by the SRIM code simulation. The Debye-Scherrer rings were observed in the SAED patterns on both materials. The structure changes into a polycrystal by ion irradiation. Additionally, the 200 superlattice reflections in the [001] net pattern were almost absent, and the streak pattern along the ⟨110⟩ direction was observed in InSb. It is considered that the anti phase domains of different lengths are formed by ion irradiation. Ion irradiation transforms the structure of InSb from chemical ordering to chemical disordering via the formation of anti phase boundaries.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 51 (6), 1059-1063, 2010
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204252001408
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- NII論文ID
- 10027018029
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- HANDLE
- 2433/148420
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- NDL書誌ID
- 10690493
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
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- CiNii Articles
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