Finely Controlled Approaches to Formation of Heusler-Alloy/Semiconductor Heterostructures for Spintronics
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- Hamaya Kohei
- Graduate School of Engineering Science, Osaka University
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- Kawano Makoto
- Graduate School of Engineering Science, Osaka University
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- Fujita Yuichi
- Graduate School of Engineering Science, Osaka University
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- Oki Soichiro
- Graduate School of Engineering Science, Osaka University
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- Yamada Shinya
- Graduate School of Engineering Science, Osaka University
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Abstract
We present recent progress of the low-temperature growth of Heusler-alloy/silicon(Si) or Heusler-alloy/germanium(Ge) heterostructures and of their applications for spintronics. First, a concept of the realization of the low-temperature heteroepitaxy for high-quality Heusler alloy/Si or Heusler alloy/Ge heterostructures is shown. Despite very low-growth temperatures, B2 or L21 ordered full-Heusler alloys are achieved. Next, by applying this concept to the growth of Ge on a Heusler alloy or a Heusler alloy on another Heusler alloy, we can also achieve unusual heterostructures for the possibility of novel spintronics applications. Finally, we demonstrate the pure spin current transport in Cu and Ge using these Heusler-alloy spin injectors and detectors. Our approaches will open new avenues for developing high-performance spintronic applications with Heusler alloys.
Journal
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 57 (6), 760-766, 2016
The Japan Institute of Metals and Materials
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Details 詳細情報について
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- CRID
- 1390001204252971264
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- NII Article ID
- 130005153160
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- NII Book ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL BIB ID
- 027330953
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed