Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy

MURAMATSU Yasuji, IIHARA Junji, TAKEBE Toshihiko, DENLINGER Jonathan D.

doi:10.2116/analsci.24.831

Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy

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MURAMATSU Yasuji

Graduate School of Engineering, University of Hyogo
IIHARA Junji

Sumitomo Electric Industries, Ltd.
TAKEBE Toshihiko

Sumitomo Electric Industries, Ltd.
DENLINGER Jonathan D.

Advanced Light Source, Lawrence Berkeley National Laboratory

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To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.