Novolak Resist Removal Using Laser (266/532nm)

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  • Horibe Hideo
    Department of Materials Science and Engineering, Kochi National College of Technology

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Abstract

Positive-tone diazonaphthoquinone/novolak resist on a 42-alloy (Fe:Ni=42:58wt%) substrate was irradiated by the second harmonic of Nd:YAG (Y3Al5O12) laser (532nm). The resist was removed (stripped) completely, despite the presence of hexamethyldisilane (HMDS) and the pre-bake condition of the resist. There was no apparent damage to the substrate by the laser. In contrast, this resist on a Si wafer could not be removed completely, and the substrate was occasionally damaged as well. The fourth harmonic of Nd:YAG laser (266nm) was used to irradiate the resist on the Si wafer, ablation was effective. There was no apparent damage to the substrate. This resist does not absorb the energy of the laser at 532nm because it is optically transparent (over 90%) above 500nm. However, its transmittance was very low (under 5%) below 300nm. The resist therefore absorbed the energy of the 266nm laser, and was removed (ablated). This development addresses environmental concerns because expensive and toxic chemicals are not used.

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