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- Burns Sean
- IBM Research, IBM Systems and Technology Group
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- Burkhardt Martin
- IBM Research, IBM Systems and Technology Group
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- Goldfarb Dario
- IBM Thomas J. Watson Research Center
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- Lustig Naftali
- IBM Research, IBM Systems and Technology Group
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- Pfeiffer Dirk
- IBM Thomas J. Watson Research Center
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- Brodsky Mary Jane
- IBM Research, IBM Systems and Technology Group
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- Clancy Alexandra
- IBM Research, IBM Systems and Technology Group
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- Medeiros David
- IBM Research, IBM Systems and Technology Group
この論文をさがす
抄録
Immersion technology is enabling the extension of 193 nm lithography by increasing the numerical aperture (NA) of the exposure system. The result is smaller depth of focus, subsequently requiring the use of thinner photoresists. Consequently, bottom antireflective coatings (BARCs) are required to have increased etch selectivity to thinner photoresists, as well as improved reflectivity control to minimize reflectivity from higher incident angles of hyper NA lens systems. A spin on trilayer patterning scheme has recently become a favorable approach to simultaneously address these issues.<br>IBM and Shin Etsu have jointly developed a silicon containing BARC for the purpose of trilayer imaging. In this work, hyper NA imaging performance of the trilayer film stack is reported, at NA > 1.0. Full field, polarized 1.2 NA dipole imaging of line/space lithographic patterns is compared with both the trilayer imaging stack as well as a single layer, organic BARC stack. The process window of 1-D line/space structures was found to be significantly improved on the trilayer imaging stack. Improved profiles were observed on the trilayer film stack, with other lithography metrics showing comparable performance on both film stacks. Characterization of a solvent based rework scheme is presented for the trilayer imaging stack. Also, the chemical interaction between the silicon BARC and the photoresist was studied with an acid diffusion experiment. Within the detection limits of the experiment, it was found that acid diffusion from the silicon BARC is not a likely contributor to imaging performance.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (5), 679-686, 2007
フォトポリマー学会
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詳細情報 詳細情報について
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- CRID
- 1390001204323846144
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- NII論文ID
- 130004464602
- 40015602546
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wmtrs%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8919001
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可