Positive Pattern Formation and its Mechanism from Ionic bonded Negative Photosensitive Polyimide

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  • Yoshida Satoshi
    Electronic & Imaging Materials Research Laboratories, Toray Industries Inc.
  • Eguchi Masuichi
    Electronic & Imaging Materials Research Laboratories, Toray Industries Inc.
  • Tamura Kazutaka
    Electronic & Imaging Materials Research Laboratories, Toray Industries Inc.
  • Tomikawa Masao
    Electronic & Imaging Materials Research Laboratories, Toray Industries Inc.

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We found positive pattern formation by ionic bonded photo-sensitive polyimide (PSPI). The PSPI is composed of poly(amic acid), photo-reactive tertiary amine (such as N.N-dimethylaminoethylacrylate), and photo-initiator. The PSPI basically has negative photo-sensitivity. However, we found that positive pattern formation from the PSPI when adding a post-exposure bake (PEB) about 120-140 °C. By adding PEB, imidization rate of unexposure area of PSPI is higher than that of exposed area. High imidizaiton of unexposed area of PSPI makes hard to solubule to alkaline solution. The imidization rate difference attributes to glass transition temperature difference between exposed area and unexposed area.

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