FET Characteristics of Dinaphthothienothiophene (DNTT) on Si/SiO2 Substrates with Various Surface-Modifications

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  • Yamamoto Tatsuya
    Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University
  • Takimiya Kazuo
    Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University

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Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm2 V-1 s-1 were obtained

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