Thiol-yne Photo-curable Hybrid Resist: An Alternative for UV Nanoimprint Lithography (UV-NIL)
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- Lin Hong
- HCC-SJTU R&D Center, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University
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- Gan Yanchang
- HCC-SJTU R&D Center, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University
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- Jiang Xuesong
- HCC-SJTU R&D Center, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University
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- Yin Jie
- HCC-SJTU R&D Center, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University
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We here designed a new hybrid resist for UV-NIL based on the thiol-yne photopolymerization. The hybrid resist is comprised of bifunctional polyhedral oligomeric silsesquioxane containing octyl and mercaptopropyl groups (POSS-OA-SH) and difunctional alkyne. The obtained hybrid resists possess numerous desirable characteristics for UV-NIL, such as great coating ability, high thermal stability, low surface-energy, low bulk volumetric shrinkage (0.8~4.8%), and excellent oxygen-etch resistance. Because of the click reaction characteristics of thiol-yne photopolymerization, the hybrid resists can be photo-cured within seconds under UV exposure at room temperature. Finally, through the double-layer resist approach for pattern transfer onto silicon substrate, the transfer pattern with the height of about 3 times more than that of the original NIL pattern can be obtained due to excellent oxygen-etch resistance of the etch barrier material. These results provide the thiol-yne hybrid resists as an alternative for UV-NIL.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (1), 121-129, 2014
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詳細情報 詳細情報について
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- CRID
- 1390001204324521600
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- NII論文ID
- 130004833562
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 025604500
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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