Fabrication of Imprint Mold with Nanotrench Patterns by Edge Lithography
-
- Noma Hayato
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
- Kawata Hiroaki
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
- Yasuda Masaaki
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
- Hirai Yoshihiko
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
この論文をさがす
抄録
SiO2 nanoline with extremely high aspect ratio could be fabricated by the edge lithography, however, such a high aspect nanoline was fragile. Since nanotrench pattern was stronger than nanoline pattern, a new process was developed for obtaining the Si nanotrench from the SiO2 nanoline in order to obtain a strong nanoimprint mold. A resist nanotrench pattern is fabricated by using only the resist coating and the resist etching. The process is much simpler than the lift-off process. The Si wafer is etched by the modified Bosch process. The fabricated Si trench width and depth are 35nm and 260nm, respectively. The Si trench pattern is replicated to polystyrene (PS) film on a silicon wafer by thermal nanoimprint lithography. The PS nanoline, whose width and height are 28 nm and 360 nm, is successfully fabricated.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 27 (1), 91-94, 2014
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204324835456
-
- NII論文ID
- 130004678325
- 40020133254
-
- NII書誌ID
- AA11576862
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 025604405
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可