Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors

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  • Sakai Heisuke
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Cheong Hae-Jeong
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Kodzasa Takehito
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Tokuhisa Hideo
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Tokoro Kazuhiko
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Yoshida Manabu
    Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Ikoga Taihei
    Department of Image and Materials Science, Graduate School of Advanced Integration Science, Chiba University
  • Nakamura Kazuki
    Department of Image and Materials Science, Graduate School of Advanced Integration Science, Chiba University
  • Kobayashi Norihisa
    Department of Image and Materials Science, Graduate School of Advanced Integration Science, Chiba University
  • Uemura Sei
    Department of Image and Materials Science, Graduate School of Advanced Integration Science, Chiba University

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抄録

Memory characteristics of organic field-effect transistors (OFETs) fabricated using poly(γ-methyl-L-glutamate) (PMLG) and poly(ε-benzyloxycarbonyl-L-lysine) [PLys(z)] as gate dielectrics are investigated. The origin of difference in the memory retention property in the transfer characteristics of the OFETs is investigated by thermally stimulated depolarized current (TSDC) and dielectric spectra measurements for the PLys(z) and PMLG films. TSDC measurements reveal that the depolarization of the PLys(z) film is mainly dominated by a single relaxation process around room temperature, but that of the PMLG film is not dominated by a relaxation process. Further, the PLys(z) film shows dielectric dispersion near room temperature, but the PMLG film does not show any dispersion. This causes difference in the electric characteristics of OFETs.

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