Fabrication of stretch-oriented regioregular poly(3-hexylthiophene) film and application to organic field-effect transistors

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  • Yasuda Takeshi
    Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science (NIMS) PRESTO, Japan Science and Technology Agency
  • Han Liyuan
    Advanced Photovoltaics Center, National Institute for Materials Science (NIMS)
  • Tsutsui Tetsuo
    Institute for Materials Chemistry and Engineering, Kyushu University

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  • Fabrication of Stretch-Oriented Regioregular Poly(3-Hexylthiophene) film and Its Application to Organic Field-Effect Transistors

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We report a fabrication process for organic field-effect transistors (OFETs) based on stretch-oriented regioregular poly(3-hexylthiophene) (rr-P3HT) film and the anisotropic carrier transport properties in the OFETs. The optical absorption spectra and XRD results indicate that π-conjugated rr-P3HT chains are aligned in the stretching direction with the π-stacking polymer planes parallel to the substrate. The field-effect hole mobility in a current flow parallel to the stretching direction is larger by a factor of 3.4 compared to that perpendicular to the stretching direction. These results indicate that charge transport via the π-conjugated rr-P3HT chains is advantageous in the stretch-oriented rr-P3HT film.

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