Fullerene Nanowires Produced by Single Particle Nanofabrication Technique and Their Photovoltaic Applications

  • Suwa Shotaro
    Department of Applied Chemistry, Graduate School of Engineering,Osaka University,
  • Maeyoshi Yuta
    Department of Applied Chemistry, Graduate School of Engineering,Osaka University,
  • Tsukuda Satoshi
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • Sugimoto Masaki
    Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency
  • Saeki Akinori
    Department of Applied Chemistry, Graduate School of Engineering,Osaka University, PRESTO-JST
  • Seki Shu
    Department of Applied Chemistry, Graduate School of Engineering,Osaka University,

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抄録

The single particle nanofabrication technique (SPNT) provides a facile and universal method to afford homogeneous, stiff, and semiconducting nanowires composed of fullerene derivatives. Following our previous success in methanofullerene (PCBM) nanowires hybridized with bulk heterojunction organic photovoltaics (OPV) of poly(3-hexylthiophene) (P3HT) and PCBM, we extended the research to indene C60 bis-adduct (ICBA). The power conversion efficiency of P3HT:ICBA OPV incorporating optimized length of ICBA nanowires was improved from 2.36% to 2.92%, alongside the increase of short circuit current density. We also discuss the interaction between substrate and unexposed fullerenes by examining immersing time to isolate such a short (50 nm) and thin (11 nm in radius) ICBA nanowire.

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