Fullerene Nanowires Produced by Single Particle Nanofabrication Technique and Their Photovoltaic Applications
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- Suwa Shotaro
- Department of Applied Chemistry, Graduate School of Engineering,Osaka University,
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- Maeyoshi Yuta
- Department of Applied Chemistry, Graduate School of Engineering,Osaka University,
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- Tsukuda Satoshi
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Sugimoto Masaki
- Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency
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- Saeki Akinori
- Department of Applied Chemistry, Graduate School of Engineering,Osaka University, PRESTO-JST
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- Seki Shu
- Department of Applied Chemistry, Graduate School of Engineering,Osaka University,
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抄録
The single particle nanofabrication technique (SPNT) provides a facile and universal method to afford homogeneous, stiff, and semiconducting nanowires composed of fullerene derivatives. Following our previous success in methanofullerene (PCBM) nanowires hybridized with bulk heterojunction organic photovoltaics (OPV) of poly(3-hexylthiophene) (P3HT) and PCBM, we extended the research to indene C60 bis-adduct (ICBA). The power conversion efficiency of P3HT:ICBA OPV incorporating optimized length of ICBA nanowires was improved from 2.36% to 2.92%, alongside the increase of short circuit current density. We also discuss the interaction between substrate and unexposed fullerenes by examining immersing time to isolate such a short (50 nm) and thin (11 nm in radius) ICBA nanowire.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (2), 193-197, 2013
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詳細情報 詳細情報について
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- CRID
- 1390001204325402752
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- NII論文ID
- 130004465019
- 40019685536
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalu7vI
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024660324
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可