Pattern Size Trimming by UV Exposure for Resist Patterns Fabricated by Thermal Nanoimprint Lithography
-
- Noma Hayato
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University,
-
- Kawata Hiroaki
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University,
-
- Yasuda Masaaki
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University,
-
- Hirai Yoshiaki
- Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University,
この論文をさがす
抄録
The shrinkage of polymethylmethacrylate and polystyrene patterns fabricated by the thermal nanoimprint process by the conventional UV/O3 treatment is examined. The reduction rate at the pattern top is larger than those at the side wall and bottom. This shows that the pattern height decreases rapidly. The line width control by the UV/O3 treatment should be carried out carefully. The stretched layer is often observed at the cutting surface of the resist pattern. The formation of the stretched layer can be effectively suppressed by the short UV/O3 treatment.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 26 (1), 109-112, 2013
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204325435776
-
- NII論文ID
- 130004465000
- 40019685663
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DC%2BC3sXhtFalu77F
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 024660471
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可