Approach for High Aspect Ratio Pattern Transfer by Nanoimprint Lithography using Mixture Polymers of Molecular Weights
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- Nishikura Naoki
- Department of Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University
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- Kawata Hiroaki
- Department of Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University
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- Hirai Yoshihiko
- Department of Physics and Electronics Engineering, Graduate School of Engineering, Osaka Prefecture University
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抄録
We propose a mixture molecular resist system consisting of high and low molecular weight resins to achieve fine and high aspect ratio pattern fabrication by nanoimprint lithography. Poly-methyl methacrylate (PMMA) with molecular weights of 50,000 g/mol and that of 350,000 g/mol are mixed. Using the mixture polymer, thermal nanoimprint is examined. The resist system is good for easy deformation into narrow patterns by low-molecular-weight components and reinforces stiffness at the pattern’s root portion against mold releasing defects by high molecular weight components. We confirm a fine pattern transfer using the proposed resist.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (1), 97-103, 2013
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詳細情報 詳細情報について
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- CRID
- 1390001204325452800
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- NII論文ID
- 130004464998
- 40019685605
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalu77I
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024660398
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可