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- Hiroshi Hiroshima
- Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced Science and Technology Institute of Multidisciplinary Research for Advanced Materials, Tohoku University Graduate School of Engineering, Osaka Prefecture University Laboratory of Advanced Science and Technology for Industry, University of Hyogo JST-CREST
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- Nakagawa Masaru
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University Graduate School of Engineering, Osaka Prefecture University Laboratory of Advanced Science and Technology for Industry, University of Hyogo JST-CREST
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- Hirai Yoshihiko
- Graduate School of Engineering, Osaka Prefecture University Laboratory of Advanced Science and Technology for Industry, University of Hyogo JST-CREST
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- Matsui Shinji
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo JST-CREST
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抄録
The effectiveness of condensable gas, used as ambience, in UV nanoimprint lithography has been demonstrated. Bubble defect problem, which is inherent in UV nanoimprint under non vacuum ambience, can be solved by PFP condensable gas. UV nanoimprint lithography using PFP was validated for 45 nm pattern fabrication under thin residual layer conditions, which are required for UV nanoimprint used as UV nanoimprint lithography. PFP reduces the viscosity and demolding force of UV curable resins. These properties are helpful in increasing the throughput and reliability of UV nanoimprint. PFP occasionally produces large shrinkages, and degrades pattern quality depending on UV curable resin. These drawbacks can be mitigated by selecting UV curable monomers with a low PFP absorption with a solubility parameter away from 20( J/cm3)1/2. UV nanoimprint using PFP is so striking that we now think use of PFP be an integral part of UV nanoimprint.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (1), 87-96, 2013
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詳細情報 詳細情報について
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- CRID
- 1390001204325454080
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- NII論文ID
- 130004464997
- 40019685595
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalu77O
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024660386
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可