Directed Self Assembly Material Development for Fine Patterning and Pattern Repair
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- Minegishi Shinya
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Namie Yuji
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Izumi Kenichi
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Anno Yusuke
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Buch Xavier
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Naruoka Takehiko
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Hishiro Yoshi
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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- Nagai Tomoki
- Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
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抄録
The Directed Self-Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Polystyrene- b-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) is a typical material used in DSA, but more advanced materials are required for achieving patterning less than 10 nm in size. High-χ block copolymers are being researched as next generation PS-b-PMMA material successors. Polymers with high-χ produce smaller pattern sizes than PS-b-PMMA. However, doing DSA with these high-χ materials requires a special method to separate one phase of BCP such as phase separation in solvent. We have done further research to improve high-χ materials to enable better DSA technology. Here we report 8.4 nm half-pitch line patterns were formed with our high-χ block co-polymer, annealing under air. DSA is a candidate for next generation lithography. However, DSA materials are not used alone. DSA materials are always used with guide pattern to “direct” self assembly materials. Currently ArF resist is well studied as guide pattern. ArF resist is extended to use further generation, but the required resolution level is already severe for 193nm patterning. Employment of blend DSA could improve the ArF pattern profile.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (1), 27-30, 2013
フォトポリマー学会
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詳細情報 詳細情報について
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- CRID
- 1390001204325464320
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- NII論文ID
- 130004464985
- 40019685403
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalurnI
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024660121
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可