Formation of Ultra Narrow Lamellar Structures in POSS-containing Triblock Terpolymers
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- Goseki Raita
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Ishizune Takashi
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Hirao Akira
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
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- Hayakawa Teruaki
- Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology
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Abstract
An ultra narrow line structure was prepared in the lamellar morphology of polyhedral oligomeric silsesquioxane (POSS)-containing triblock terpolymer in the bulk via the self-assembly. The triblock terpolymers, which comprised polystyrene, POSS-containing poly(methacrylate) (PMAPOSS) and poly(methyl methacrylate), were synthesized by anionic polymerization. The self-assembled structures were studied by using a transmission electron microscopy (TEM) and a small-angle X-ray scattering (SAXS). It was found that a narrow PMAPOSS domain was layered in triple-domain lamellar, which caused by the effect of strongly segregation with the middle PMAPOSS block. The total d-spacing was 32 nm, and the smallest width of PMAPOSS domain layer was ca. 4 nm.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (1), 39-44, 2013
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390001204325466880
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- NII Article ID
- 130004464987
- 40019685421
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- NII Book ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFalurnF
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 024660148
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed