Material Development for ArF Immersion Extension towards Sub-20nm Node

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  • Furukawa Tsuyoshi
    Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
  • Terayama Kousuke
    Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
  • Shioya Takeo
    Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation
  • Shima Motoyuki
    Fine Electronic Research Laboratories, Semiconductor Materials Laboratory, JSR Corporation

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Today ArF immersion processes are widely applied for advanced device manufacturing. ArF immersion lithography enables 4x nm half-pitch (hp) lithography. The use of double patterning extends immersion to 2x nm hp lithography. New materials for such 193nm lithography extensions are widely needed, especially for post-193nm immersion lithography technology. In this paper, we report a slimming material that makes line patterns smaller and it succeeds in forming 20nm lines.<br>In another study, we examined a new hydrophilic lactone to improve line width roughness (LWR) and defectivity. First, we studied the lactone reactivity with developer and its behavior during development. Then we verified its line width LWR performance and defectivity. When the hydrophilic new lactone is used in a photoresist, an improvement in LWR and defectivity photoresist was observed. This is very useful progress, especially in combination with processes such as multiple patterning to extend ArF immersion to sub-20nm hp dimensions.

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