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- Cardinear Brian
- College of Nanoscale Science and Engineering, State University of New York
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- Kruger Seth
- College of Nanoscale Science and Engineering, State University of New York
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- Earley William
- College of Nanoscale Science and Engineering, State University of New York
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- Higgins Craig
- College of Nanoscale Science and Engineering, State University of New York
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- Revuru Srividya
- College of Nanoscale Science and Engineering, State University of New York
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- Georger Jacque
- SEMATECH
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- Brainard Robert
- College of Nanoscale Science and Engineering, State University of New York
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This paper describes the synthesis of a new series of chain-scission polymers and their lithographic results in extreme ultraviolet (EUV) resist formulations. This new platform incorporates acid-catalyzed cleavable groups into the polymer backbone. Upon exposure to EUV light and bake, the polymer is transformed from high to low molecular weight segments in the exposed regions. Six polymer variations were prepared from two cleavable monomers and two aromatic linkers. Five of these polymers were formulated into resists and lithographically evaluated at Lawrence Berkeley National Laboratories. All the resists are lithographically active, and one is capable of resolving 36 nm dense lines with modulation down to 28 nm.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 23 (5), 665-671, 2010
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詳細情報 詳細情報について
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- CRID
- 1390001204325671552
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- NII論文ID
- 130004464850
- 40017186911
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3cXpsVOhsL8%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 10736151
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可