Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
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- Fujiwara Takanori
- Toray Industries Inc.
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- Tanigaki Yugo
- Toray Industries Inc.
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- Furukawa Yukihiro
- ULVAC Inc.
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- Tonari Kazuhiro
- ULVAC Inc.
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- Otsuki Akihiro
- Fuji Electric Co.,Ltd,
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- Imai Tomohiro
- National Institute of Advanced Industrial Science and Technology AIST
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- Oose Naoyuki
- National Institute of Advanced Industrial Science and Technology AIST
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- Utsumi Makoto
- National Institute of Advanced Industrial Science and Technology AIST
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- Ryo Mina
- National Institute of Advanced Industrial Science and Technology AIST
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- Gotoh Masahide
- National Institute of Advanced Industrial Science and Technology AIST
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- Nakamata Shinichi
- National Institute of Advanced Industrial Science and Technology AIST
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- Sakai Takao
- National Institute of Advanced Industrial Science and Technology AIST
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- Sakai Yoshiyuki
- National Institute of Advanced Industrial Science and Technology AIST
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- Miyajima Masaaki
- National Institute of Advanced Industrial Science and Technology AIST
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- Kumura Hiroshi
- National Institute of Advanced Industrial Science and Technology AIST
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- Fukuda Kenji
- National Institute of Advanced Industrial Science and Technology AIST
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- Okumura Hajime
- National Institute of Advanced Industrial Science and Technology AIST
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抄録
Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and fabricate model SiC schotky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 °C and 800 °C due to avoiding the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed “SP-D1000” produced by Toray Industries, Inc.. We demonstrated to fabricate the model SiC-SBDs devices based on our proposal process with “SP-D1000” and confirmed the device working as same as a current process.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 27 (2), 233-236, 2014
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詳細情報 詳細情報について
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- CRID
- 1390001204325702656
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- NII論文ID
- 130004678346
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 025604239
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可