Understanding EUV Shot Noise: Comparing Theory and Requirements to Experimental Evidence
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- Neisser Mark
- SEMATECH
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- Cho Kyoung Yong
- SEMATECH
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- Sarma Chandra
- SEMATECH
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- Petrillo Karen
- SEMATECH
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High resolution contact holes were printed with different EUV resists on an EUV microstepper exposure tool. Intrinsic critical dimension uniformity (corrected CDU) was separated statistically from other location effects. As expected, there was worse CDU for resists with lower dose to size. Comparison of corrected CDU to calculated shot noise showed a significant correlation. However the CDU of the fastest resists tested showed substantial variation, suggesting that different chemical approaches to making fast resists can give different CDU. Comparison of experimental results and of calculated shot noise to ITRS roadmap requirements for contact hole CDs suggests that some post processing that improves CDU will be needed in the future or that chip designs with tolerance to significant contact hole CDU will be needed.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 26 (5), 617-623, 2013
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詳細情報 詳細情報について
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- CRID
- 1390001204325866624
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- NII論文ID
- 130004465043
- 40019713136
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3sXhtFChsrnN
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 024709804
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可