Advances in Patterning Characteristics of Chemically Amplified Resists with an Organic Base.
-
- Kawai Yoshio
- NTT System Electronics Laboratories
-
- Otaka Akihiro
- NTT System Electronics Laboratories
-
- Nakamura Jiro
- NTT System Electronics Laboratories
書誌事項
- タイトル別名
-
- Advances in Patterning Characteristics
この論文をさがす
抄録
Resist technologies for fabricating quarter-micron patterns by KrF lithography have been studied We developed a novel chemically amplified (CA) positive resist. To improve environmental stability, we investigated the effect of using an organic base in CA resist on patterning characteristics. Using these technologies, we can successfully fabricate 0.24-μm gate patterns whose accuracy is less than ±10% in LSI fabrication. We have also developed a new resolution enhancement technique based on the balance in the intensity and the phase between the 0th-order rays and the rays diffracted from a line pattern. It is clarified that an organic base additive improves resolution of CA resist to less than 0.1μm.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 11 (3), 399-404, 1998
フォトポリマー学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204325941888
-
- NII論文ID
- 130003488083
- 40005351812
-
- NII書誌ID
- AA11576862
-
- COI
- 1:CAS:528:DyaK1cXkvVGqtbo%3D
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 4525912
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可