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- Lee Gensu
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Jung Jaechang
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Lee Sungkwon
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Lee Sungkoo
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Kim Taekwan
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Park Jungwoo
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Bok Cheolkyu
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Moon Sungchan
- Advanced Process Dept.2, Memory R&D Division, Hynix
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- Kim Jinwoong
- Advanced Process Dept.2, Memory R&D Division, Hynix
この論文をさがす
抄録
We have studied new contact hole shrinkage methods, CASS process and MAGIC process1. They are simple and cost-effective methods compared to conventional technologies such as RELACS, SAFIER, and CONPEAT. We successfully defined sub-80nm C/H patterns with good profile and broad process margin using modified MAGIC process, so-called M+ (MAGIC-PLUS) process. This process showed less photo-to-etch bias than conventional thermal flow due to relative vertical profile. This process is exactly same process with thermal flow process except treating specific aqueous solution after either soft bake or exposure.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 18 (3), 345-348, 2005
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詳細情報 詳細情報について
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- CRID
- 1390001204326187520
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- NII論文ID
- 130004833034
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 7338249
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可