Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
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- PANSILA P. Pungboon
- Yamagata University
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- KANOMATA Kensaku
- Yamagata University
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- AHMMAD Bashir
- Yamagata University
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- KUBOTA Shigeru
- Yamagata University
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- HIROSE Fumihiko
- Yamagata University
説明
Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100–450°C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga2O3. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface and regeneration of the adsorption sites for TMG. We successfully prepared Ga2O3 films on Si substrates at RT with a growth per cycle of 0.055 nm/cycle.
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E98.C (5), 382-389, 2015
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390001204377486464
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- NII論文ID
- 130005067743
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可