Structural and Transport Properties of CuIr2(S,Se)4 under High Pressure.

DOI Web Site 8 References
  • Tang J.
    National Research Institute for Metals
  • Furubayashi T.
    National Research Institute for Metals
  • Kosaka T.
    Department of Science, University of Tsukuba
  • Nagata S.
    Department of Materials Science and Engineering, Muroran Institute of Technology
  • Kato Y.
    Department of Materials Science and Engineering, Muroran Institute of Technology
  • Asano H.
    Institute of Materials Science, University of Tsukuba
  • Matsumoto T.
    National Research Institute for Metals

Bibliographic Information

Other Title
  • Structural and Transport Properties of

Search this article

Abstract

The structural and transport properties of CuIr2 (S1-xSex) 4 spinel compounds under high pressure have been studied up to 10 GPa. Resistivities of all samples were found to become insulating with increasing pressure even for the samples behaving metallic at ambient condition. When pressure was applied to the metallic samples with x=0. 9 and 1. 0, an anomalous peak appeared below 100K in the temperature dependence of the resistivity at lower pressure, but the semiconducting behaviour governed the whole temperature region at higher pressure. No structural change was observed at the temperature above and below the anomalous peak. This behaviour was discussed by the model based on some ordering of the localized charges induced by applied pressure.

Journal

References(8)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top