High Pressure Synthesis of Boron Nitride Single Crystals

DOI Web Site 36 References
  • TANIGUCHI Takashi
    Advanced Materials Laboratory, National Institute for Materials Sciences
  • WATANABE Kenji
    Advanced Materials Laboratory, National Institute for Materials Sciences
  • NAKAYAMA Atsuko
    Advanced Materials Laboratory, National Institute for Materials Sciences

Bibliographic Information

Other Title
  • 窒化ホウ素単結晶の高圧合成
  • チッカ ホウソタンケッショウ ノ コウアツ ゴウセイ

Search this article

Description

In this article, current status of high-pressure synthesis of boron nitride single crystals and their properties were reviewed. In the viewpoint of the nature of the wide band gap semiconductor, cBN has promising potential so as to be easily fabricated p-n domain. The intrinsic properties of cBN has not yet been, however, realized due to their defects and impurities. By using Ba-BN solvent system, high purity single crystals of cubic and also hexagonal BN can be obtained. In particular, high purity hBN single crystals exhibit promising nature as a new candidate of deep ultraviolet-light emitter. Further study to realize semiconducting nature in hBN is important for the future work.

Journal

References(36)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top