MOCVD法による光IC薄膜作製用原料としての高純度Nb(dpm)2Cl3の合成

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  • Synthesis of High Purity Nb(dpm)2CI3 for Preparation of Photo IC Thin Films by MOCVD
  • Synthesis of High Purity Nb(dpm)2Cl3 for Preparation of Photo IC Thin Films by MOCVD.

抄録

A highly pure dipivaloylmethane (Hdpm) chelate of niobium(V), Nb(dpm)2C13, wassynthesized by the reaction of the ligands with niobium pentachloride using anhydroussolvents under highly pure argon gas atmosphere. The formation of the aimed product wasconfirmed by means of ICP, elmental analysis, FT-IR, '3C-NMR, and TG-DTA.Vaporization of impurities was not found in TG measurement. The niobium complexvaporized in the range of 180 to 340 °C without residue. Nb(dpm)2C13 proved to be promisingas a new source material of MOCVD for the preparation of photo IC thin films by MOCVD.

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