Characterization of Piezoelectric Property of Sol-Gel PZT Thin Films and Its Improvement by Poling
-
- Yamashita Kaoru
- Osaka University, Graduate School of Engineering Science
-
- Okuyama Masanori
- Osaka University, Graduate School of Engineering Science
この論文をさがす
説明
A method for evaluating transverse piezoelectric coefficient of a thin film on a bulk substrate has been proposed. The measurement method is simple and independent on elastic constants of both the film and the substrate when the film is thinner enough than the substrate. Piezoelectric properties of sol-gel derived PZT (Pb(Zr, Ti)O3) thin films before and after electrical poling were evaluated using this method. The piezoelectric coefficient h31 of the film of 2.2μ thickness is -400MV/m after a poling of -200kV/cm, which is about a half of that of poled ceramic. Improvement of piezoelectric property by poling was confirmed to be caused by increase of retained polarization with clear proportionality.
収録刊行物
-
- 電気学会論文誌E(センサ・マイクロマシン部門誌)
-
電気学会論文誌E(センサ・マイクロマシン部門誌) 124 (4), 124-128, 2004
一般社団法人 電気学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204460044416
-
- NII論文ID
- 10012704002
-
- NII書誌ID
- AN1052634X
-
- BIBCODE
- 2004IJTSM.124..124Y
-
- ISSN
- 13475525
- 13418939
-
- NDL書誌ID
- 6909573
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可