Room-Temperature Bonding of GaN to Al Using Ar-Beam Surface Activation
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- Higurashi Eiji
- Research Center for Advanced Science and Technology, The University of Tokyo
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- Kaneko Akihiro
- School of Engineering, The University of Tokyo
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- Akaike Masatake
- School of Engineering, The University of Tokyo
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- Suga Tadatomo
- School of Engineering, The University of Tokyo
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As-grown n-type GaN has been bonded successfully to polycrystalline Al by surface activated bonding in an ultrahigh vacuum at room temperature. The microstructure, bonding strength, and electrical characteristics of the bonded GaN/Al interface have been investigated using transmission electron microscopy (TEM), tensile strength testing, and current-voltage (I-V) measurements. For producing active surfaces, argon-fast atom beam sputtering source (acceleration voltage: 1.5 kV, current: 15 mA) was used. The TEM study showed that a nearly continuous amorphous thin interlayer composed of mainly Al with a thickness of about 10 nm was observed at the bonded interface. The tensile strength of GaN/Al samples was in the range of 14-19 MPa. The results of I-V measurements showed that the n- GaN/Al interface without thermal annealing was rectifying, and became ohmic after thermal annealing in N2 gas ambient at 600°C.
収録刊行物
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- 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）
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電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 130 (8), 369-372, 2010
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204461038592
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- NII論文ID
- 10026498180
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 10765374
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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