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- 一番ヶ瀬 剛
- 大島商船高等専門学校
書誌事項
- タイトル別名
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- Application of the Spectral Sensitivity for the Semiconductor Junction Analysis
- ブンコウ カンド オウトウ デンリュウ オ シヨウ シタ セツゴウ トクセイ カイセキ ノ ホウホウ ト オウヨウ
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In this report, the spectral sensitivity was used for semiconductor junction analysis. This analysis is carried out by means of a photoconduction characteristic depend on the electric field strength in the material. The light absorption and the photoconduction current are in proportion, and the electric field strength in the material is known by way of comparing the photoconduction current to the light absorption. The material has different absorption coefficients each wave lengths, and has different complete light absorption lengths. Then, it is possible to select the analysis area at the material, if select appropriate wave length. From this analysis method, the electric field strength and the potential along thickness of the material can be evaluated. This analysis method was applied to evaluate the electric field strength on the ITO-ZnSe junction, and the potential distribution and the depletion layer were evaluated. As a result, it was found that ZnSe layer had space charges near the junction.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 127 (1), 14-18, 2007
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204461059456
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- NII論文ID
- 10018660315
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 8626001
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可