半導体検査用片持ち梁型シリコンプローブの三次元配線プロセス

DOI Web Site Web Site 参考文献5件

書誌事項

タイトル別名
  • Three-Dimensional Wiring Fabricating Process of Cantilever-type Silicon Probe for Semiconductor Testing
  • ハンドウタイ ケンサヨウ カタモチリョウガタ シリコンプローブ ノ サンジゲン ハイセン プロセス

この論文をさがす

説明

A fabricating method of three-dimensional wirings on a cantilever-type silicon probe has been developed for a semiconductor testing. The cantilever-type silicon probe consists of probe-tips, cantilevers, apertures and three-dimensional wirings. The wiring is connected from probe-tip to back-side electrode via cantilever edge, cantilever backside and aperture side-wall. The problem of the cantilever-type silicon probe is that breakings of wiring occur at the cantilever edge and the aperture edge. The shapes of the cantilever edge and the aperture edge are optimized by applying a compensation mask and a roof-removal mask, respectively. We fabricate the cantilever-type silicon probe without breaking of wiring in 1216 pins, and confirm to be able to contact aluminum electrodes on the semiconductor.

収録刊行物

参考文献 (5)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ