High Sensitivity InAs DQW Linear Hybrid Hall ICs with InAs Deep Quantum Well Hall Elements
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- Shibasaki Ichiro
- Toyohashi Institute of Technology The Noguchi Institute
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- Kuriyama Kenji
- Asahikasei Electronics Corporation
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- Makino Takashi
- Asahikasei Electronics Corporation
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- Hukasawa Naoya
- Asahikasei Electronics Corporation
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- Suzuki Kenji
- Asahikasei Electronics Corporation
Bibliographic Information
- Other Title
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- 量子井戸型InAsホール素子による高感度リニアハイブリッドホールIC
- リョウシ イドガタ InAs ホール ソシ ニ ヨル コウカンド リニアハイブリッドホール IC
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Abstract
By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and a Si IC linear amplifier in a small plastic package, a very small sized InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity was developed. The output voltage of the hybrid Hall IC showed a very small temperature coefficient of 0.02%/°C and the response time was very small at less than 3µsec. By using this InAs DQW LHHIC, practical current sensors having high sensitivity, high accuracy, and temperature stability were developed.
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 133 (10), 301-306, 2013
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204462151808
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- NII Article ID
- 10031201006
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL BIB ID
- 024946935
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed