Characteristics of Vertical Hall Cells and Improvement of Their Sensitivity.
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- Maenaka Kazusuke
- Himeji Institute of Technology
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- Ogusu Tatsuro
- Toyohasshi University of Technology
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- Fujita Harumitu
- Toyohasshi University of Technology
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- Maeda Muneo
- Himeji Institute of Technology
Bibliographic Information
- Other Title
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- 縦型ホール素子の特性と高感度化
- タテガタ ホール ソシ ノ トクセイ ト コウカンドカ
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Abstract
This paper deals with detailed characteristics and improvement of the sensitivity of vertical Hall cells. The vertical Hall cells are useful devices for realizing a two-or three-dimensional magnetic sensor system because they can detect the magnetic field parallel to the chip surface. First, we focused on the behavior of the offset voltage of the vertical Hall cells which is the most important specification for a practical system. The experiments showed that there is an optimum geometry with respect to the offset voltage and the spatial resolution, and the offset stability with the applied stress of vertical Hall cells is 10 to 100 times as great as that of lateral Hall cells. Moreover, we attempted a drastic improvement of the sensitivity by using trench grooves to restrict the current path. As a result, a very high product sensitivity of 1230V/AT was obtained.
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 117 (7), 364-370, 1997
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204462189824
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- NII Article ID
- 10004832273
- 10003867789
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
- http://id.crossref.org/issn/13418939
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- NDL BIB ID
- 4237372
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed