Silicon Planar Humidity Sensor Using Anodic Oxidized Aluminum

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  • 陽極酸化アルミニウムを用いたシリコンプレーナ型湿度
  • ヨウキョク サンカ アルミニウム オ モチイタ シリコンプレーナガタ シツド

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A planar humidity sensor using anodic oxidized aluminium film (Porous alumina) has been developed. The basic structure of sensor is similar to n-MOSFET except that the gate region is formed by porous alumina as a humidity sensing element. Anodic oxidation is carried out in dilute H3PO4 solution at constant voltage of 10V. The sensors show a large current response for exposure to a high humidity (>50% RH) at room temperature. The time response of sensor during transient exposure to humidity is a few minutes. The mechanism of the current response to humidity is qualitatively discussed.

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