Quadrupole SIMS Analysis of Si Concentration in GaN Layers by a Molecular Ion Detection with a Minor Isotope
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- Ootomo Shinya
- Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
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- Yoshikawa Hirokazu
- Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
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- Maruya Hiromichi
- Yokohama R & D Laboratories, Furukawa Electric Co., Ltd.
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抄録
The optimal condition suitable for using a quadrupole SIMS (Q-SIMS) instrument to measure the Si concentration in GaN layers for both selectively isotopic Si-implanted GaN and epitaxially Si-doped GaN was presented. The detection of 30Si14N- molecular ions under Cs+ primary ion bombardment realized the best dynamic range and the lowest detection limit for Q-SIMS analysis of Si in GaN layers. The detection limits of selectively isotopic 30Si and the total amount of Si naturally occurring isotopes in GaN layers can reach 2 × 1014 cm-3 and 8 × 1015 cm-3, respectively. We concluded that a Q-SIMS instrument was applicable for the analysis of the Si depth distribution in GaN layers.
収録刊行物
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- Journal of Surface Analysis
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Journal of Surface Analysis 17 (3), 256-259, 2011
一般社団法人 表面分析研究会
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詳細情報 詳細情報について
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- CRID
- 1390001204471301760
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- NII論文ID
- 130005138951
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- NII書誌ID
- AA11448771
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- ISSN
- 13478400
- 13411756
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- NDL書誌ID
- 11077541
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可