Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices by secondary ion mass spectrometry
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- Lim Weon Cheol
- Korea Institute of Science & Technology
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- Lee Jihye
- Korea Institute of Science & Technology
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- Lee Yeonhee
- Korea Institute of Science & Technology
書誌事項
- タイトル別名
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- Characterization of Cu(InGa)Se<sub>2</sub> (CIGS) Thin Films in Solar Cell Devices by Secondary Ion Mass Spectrometry
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In this study, a quantitative analysis of Cu(InGa)Se2 (CIGS) was performed using an electron probe microanalysis (EPMA) equipped with a wavelength dispersed spectroscopy (WDS), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and dynamic secondary ion mass spectrometry (dynamic SIMS). Reproducible quantitative analysis data were obtained for CIGS layers from a depth profile of SIMS and relative sensitivity factor (RSF) value calculated using the mole fraction of EPMA. In addition, to obtain a reproducible quantitative analysis for CIGS layers through SIMS depth profile, the experimental conditions were changed including the primary ion, beam energy, and beam current.
収録刊行物
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- Journal of Surface Analysis
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Journal of Surface Analysis 17 (3), 324-327, 2011
一般社団法人 表面分析研究会
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詳細情報 詳細情報について
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- CRID
- 1390001204471339392
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- NII論文ID
- 130005138966
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- NII書誌ID
- AA11448771
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- ISSN
- 13478400
- 13411756
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- NDL書誌ID
- 11077712
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可