新配線小型ショットキバリアIR-CCDイメージセンサ : 情報入力

DOI

書誌事項

タイトル別名
  • A Miniature PtSi Schottky-Barrier IR-CCD Image Sensor Having New Wiring Structure

説明

A back surface illuminated 130×130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4 percent fill factor and 3.3 μm wide VCCD in a 30 μm□ pixel. The charge handling capability for VCCD achieves 9.8 × 10^5 electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with f/1.3 optics.

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390001204520625664
  • NII論文ID
    110003678972
  • DOI
    10.11485/tvtr.18.17_13
  • ISSN
    24330914
    03864227
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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