Electrical Characteristics, Q-V and C-V curves, of ZnS:Mn Thin-Film Electroluminescence Device and Its Equivalent Circuit

DOI
  • Kaifu Atsuyoshi
    Department of Electrical and Electronic Engineering, Tottori University
  • Inoue Satoshi
    Department of Electrical and Electronic Engineering, Tottori University
  • Ohmi Koutoku
    Department of Electrical and Electronic Engineering, Tottori University
  • Tanaka Shosaku
    Department of Electrical and Electronic Engineering, Tottori University
  • Kobayashi Hiroshi
    Department of Electrical and Electronic Engineering, Tottori University

Bibliographic Information

Other Title
  • ZnS:Mn薄膜EL素子のQ-V特性、C-V特性と等価回路 : 発光型ディスプレイ関連 : 情報ディスプレイ

Abstract

Electrical characteristics of the ZnS:Mn thin-film EL devices, such as Q-V and I-V curves, have been investigated, Capacitance of the EL device, insulating layer and phosphor layer was evaluated by using Q-V and I-V curves. As a drive voltage, sinusoidal, triangular and pulse waveforms were used. The capacitance evaluated by using sinusoidal and triangular waveforms agreed each other. It is shown that in the case of triangular waveforms, I-V characteristic is equivalent to C-V characteristic because dV/dt is constant. On the contrary, in the case of pulse voltage excitation, an evaluation error is relatively large, and a certain value was not obtained. By using an equivalent circuit of the thin-film EL device, SPICE simulation has been performed. The simulated results of Q-V and I-V characteristics agreed qualitatively with the observed results.

Journal

  • ITE Technical Report

    ITE Technical Report 17 (2), 55-60, 1993

    The Institute of Image Information and Television Engineers

Keywords

Details 詳細情報について

  • CRID
    1390001204521450112
  • NII Article ID
    110003678425
  • DOI
    10.11485/tvtr.17.2_55
  • ISSN
    24330914
    03864227
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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