Magnetoresistance of FeCo Nanocontacts With Current-Perpendicular-to-Plane Spin-Valve Structure

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  • スピンバルブ構造を持ったFeCoナノコンタクトMR(記録システムおよび一般)
  • スピンバルブ構造を持ったFeCoナノコンタクトMR
  • スピンバルブ コウゾウ オ モッタ FeCo ナノコンタクト MR

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Abstract

We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5Ωμm^2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al.NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

Journal

  • ITE Technical Report

    ITE Technical Report 32.23 (0), 19-23, 2008

    The Institute of Image Information and Television Engineers

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