Dark Current Reduction in Stacked CMOS-APS for Charged Particle Imaging

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  • 低暗電流化荷電粒子検出イメージセンサ(固体撮像技術および一般)
  • 低暗電流化荷電粒子検出イメージセンサ
  • テイアンデンリュウカ カデン リュウシ ケンシュツ イメージセンサ

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Abstract

A stacked CMOS active pixel sensor (APS) with a newly devised pixel structure for charged particle detection was designed, fabricated and tested. Hot carrier generation at the readout transistor inside the pixel was suppressed, thereby low leakage current as low as 5×10^<-8> V/s at the pixel electrode under low operation temperature was achieved. Ion conversion characteristics were tested with the imager installed in a projection-type Secondary Ion Mass spectrometer (SIMS). Total noise floor and dynamic range were measured to be 3 ions and 84dB for 10keV incident Al ions, respectively.

Journal

  • ITE Technical Report

    ITE Technical Report 26.26 (0), 7-12, 2002

    The Institute of Image Information and Television Engineers

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